AP0854 Effect of Silver Content and Post-Deposition Annealing on Electrical Properties of CAZTSe Thin Films and Their Heterojunction Diodes

Abstract

In this study, the effect of Ag content and annealing temperature on the electrical properties of polycrystalline (Cu_1-xAg_x)₂ZnSnSe₄ thin films and the C-V characteristics of Al/n-CdS/p-CAZTSe/n-Si/Al heterojunction diodes are investigated. The Ag content (x) and the annealing temperature (Ta) were chosen to be (0.0, 0.1, and 0.2) and (373 and 473) K, respectively. The results showed that all the prepared thin films exhibit p-type conductivity and that the hole concentration decreases with increasing x and Ta. Additionally, the width of the depletion region and the potential barrier of all the manufactured diodes, which are of the abrupt type, increase with the increase of x and Ta.