AP0823 Photoresponsive Analysis of Zinc Telluride Broadband Photodetector Fabricated using Pulsed Laser Deposition Technique

Abstract

In this work, zinc telluride (ZnTe) films were deposited on n-type silicon and FTO glass substrate by using the pulsed laser deposition technique at an energy of 180 mJ with various numbers of pulses (900 and 700). X-ray diffraction results revealed that the synthesised ZnTe nanostructures have a polycrystalline, cubic structure in a crystallisation direction (111) and high intensity, with the absence of the hexagonal phase. FE-SEM revealed that all the films are homogeneous and free of voids and cracks. The energy gap decreased from 2.86 eV to 2.74 eV when the number of laser pulses increased. Silver (Ag) electrodes were deposited on the films, and detection tests were conducted. The spectral response of the detector increased from 15.706 µA/mW to 27.028 µA/mW when the number of pulses increased from 700 to 900. The specific detectivity and quantum efficiency increased from 7.92 ×10¹⁷ Jones to 8.54 ×10¹⁷ Jones and from 42.338% to 72.85%, respectively, when the number of pulses increased. The response and recovery times were 0.31 and 0.34 s, respectively.