AP0871 Structural and Electrical Properties of Bi2Te3:Al Films Prepared by Thermal Evaporation

Abstract

In order to assess the influence of Al doping on the structural and electrical properties of Bi₂Te₃, before and after annealing, a range of tests were carried out on samples prepared through thermal evaporation. These tests included x-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), atomic force microscopy (AFM), Hall effect, electrical resistivity, and electrical conductivity. The XRD analysis confirmed the formation of the films, and both SEM and AFM determined that there were no defects in the fabricated films. The addition of Al resulted in a rise in carrier concentration and electrical conductivity, as well as a reduction in electrical resistivity.