Synthesis of Silicon Carbide Nanostructures from Carbon Sooted-Silicon Substrates Using Magnetron Sputtering Technique

Abstract

In this work, a simple, inexpensive, and fast method to prepared silicon carbide from formation of carbon soot layer on silicon substrate by air laminar diffusion flames. This layer was 143 nm in thickness and formed at different exposure times. The carbon soot-silicon substrate was used to synthesize silicon carbide nanostructures by magnetron sputtering technique at optimum conditions. The structural characteristics of the prepared samples were investigated by using x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive x-ray (EDX) spectroscopy. The spectroscopic characteristics were determined by UV-visible and Fourier-transform infrared (FTIR) spectroscopy. As the formation of silicon carbide nanostructures was confirmed, the particle size of the final sample is the minimum found to be around 47.44 nm, with an absorption peak around 400 nm and energy band gap of 2.4 eV.