Optical Properties of CuS/Porous Silicon Heterojunction

Abstract

In the present work, monocrystalline porous silicon was  fabricated using the photo-electrochemical etching technique and then copper sulfide (CuS) nanoparticles were deposited on a porous silicon substrate at 250°C using spray pyrolysis method at different concentrations of CuS (0.1, 0.3 and 0.5M). The physical properties of CuS/PSi/c-Si heterojunction were studied. The results of photoluminescence (PL) exhibited that the peak position of PL spectra was shifted to the longer wavelength or lower energy when the concentration of CuS was increased. On the other side, the energy gap of CuS decreased with increasing concentration. The values of energy gap are 2.7, 2.59, and 2.55 eV at 0.1, 0.3 and 0.5M, respectively. The properties of the CuS/PSi/n-Si structure were enhanced.