Energy Band Diagram of ZnS/Si Heterojunction Prepared by Aqueous Solution Deposition Method

Abstract

In this work, a p-n junction was created by preparing a thin layer of ZnS, an n-type semiconductor, on a p-type silicon substrate. The 200°C temperature. The ZnS thin films' polycrystalline nature of the wurtzite-hexagonal type and favored growth direction (100) were revealed by the X-ray diffraction. The direct optical energy gap of 3.64 eV for ZnS thin films was demonstrated using optical properties. The cross-sectional measurement of the ZnS film revealed that its thickness was 322.45 nm. Voltage-current characteristics show the behavior of the diodes and the built-in voltage was also ascertained by capacitance-voltage measurements. The constructed heterojunction's band diagram (np) is assumed in this investigation.