Study the Effect of Etching Time on the Morphology of Porous Silicon Surfaces Manufactured via Photochemical Etching

Authors

  • Islam N. Yousif University of Al-Hamdaniya Author
  • Malak J. Ali University of Al-Hamdaniya Author
  • Ismael T. Tlayea University of Al-Hamdaniya Author

DOI:

https://doi.org/10.2026/g1q1n792

Abstract

The main objective of the current study is to characterize radioactivity in selected samples of building materials by measuring the amounts of natural radionuclides (238U, 232Th, 40K) using gamma spectroscopy with a high-purity germanium (HPGe) detector. Samples selected for the models were collected from different origins and subjected to analysis to confirm average concentrations of radionuclides. Then, risk factors were calculated and these results were compared to international values for further analysis. The results of the study indicate that the quantities of radionuclides fall within the established global natural limits, which indicates that the levels of natural radioactivity fall within the globally accepted range.

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Published

01-07-2024

How to Cite

Study the Effect of Etching Time on the Morphology of Porous Silicon Surfaces Manufactured via Photochemical Etching. (2024). Iraqi Journal of Applied Physics, 20(3A), 557-560. https://doi.org/10.2026/g1q1n792